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Applied Materials P 5000 PECVD (Plasma-Enhanced Chemical Vapor Deposition)
Applied Materials P 5000 PECVD (Plasma-Enhanced Chemical Vapor Deposition)
Applied Materials P 5000 PECVD (Plasma-Enhanced Chemical Vapor Deposition)
Applied Materials P 5000 PECVD (Plasma-Enhanced Chemical Vapor Deposition)

Applied Materials P 5000 PECVD (Plasma-Enhanced Chemical Vapor Deposition)

Asset #: 9926

Make: Applied Materials

Model: P 5000

Wafer Sizes: 4 inch

Last Confirm Date: July 21, 2016

Applied Materials P 5000 PECVD (Plasma-Enhanced Chemical Vapor Deposition), 4"
Chambers:
• Chamber A: 4” CVD Silane oxide deposition process kit
• Chamber B: Empty
• Chamber C: Empty
• Chamber D: Empty
Process gasses:
• Nitride: SiH4 / N2 / NH3
• OxiNitride: SiH4 / N2 / NH3 N2O
• USG: SiH4 / N2O
• PSG: SiH4 / N2O / PH3 in Ar
P 5000 Mark II Silane Oxide system (4”). One common Silane Oxide deposition chamber
• Mainframe containing load lock chamber with cassette to cassette wafer handling, 20 slots VME controller with hard disk and floppy
disk storage, 28-line compatible on-board gas panel, bolt down load lock chamber lid, and load lock purge system.
Software:
• 16-bit microprocessor (Motorola 58010). Fully optoisolated inputs and ouputs. 50/32 analog inputs/outputs. 96/96 digital inputs/outputs
• Process programming: Guided step entry method. Maximum recipe size:100 steps
120 watt Solid state RF generator, process kit, gas distribution plate, MFC controller gas line
Electricity
• 208 VAC, 3 phase, 60 Hz
• 5 Wire WYE, 150A/100A (CVD ETCH)
• Transformers 380 VAC, 3P, 50Hz, 3 wire WYE
Chilled water
• Filtered to 120 @m, regulated to 60 PSI, 17 to 22°C
2000 Vintage

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