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Gap Technology 412 R Post CMP Scrubber (Chemical Mechanical Polisher)
Gap Technology 412 R Post CMP Scrubber (Chemical Mechanical Polisher)
Gap Technology 412 R Post CMP Scrubber (Chemical Mechanical Polisher)
Gap Technology 412 R Post CMP Scrubber (Chemical Mechanical Polisher)
Gap Technology 412 R Post CMP Scrubber (Chemical Mechanical Polisher)
Gap Technology 412 R Post CMP Scrubber (Chemical Mechanical Polisher)
Gap Technology 412 R Post CMP Scrubber (Chemical Mechanical Polisher)
Gap Technology 412 R Post CMP Scrubber (Chemical Mechanical Polisher)

Gap Technology 412 R Post CMP Scrubber (Chemical Mechanical Polisher)

Asset #: 71895

Make: Gap Technology

Model: 412 R

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Gap Technology 412 R Post CMP Scrubber (Chemical Mechanical Polisher), 4" to 12"
With:
- Two double-side PVA brush
stations
- Drying station
- Optional megasonic cleaning
FEATURES
- 2 double-sided PVA brush stations
- Single wafer load rinse station
- Spin rinse dry output station
OPTIONS
- Megasonic Unit for enhanced
cleaning
- Quick dump rinse (QDR-1, single tank)
- Quick dump rinse (QDR-2, recycling)
- Cleaner gripper option
- Spin Rinse Dry Output Station
- Single Wafer Load Input Rinse Station
- Spin Rinse Dry Output Station
STANDARD CONFIGURATIONS:
- Single wafer manual load
- Pre-cleaning DI H2O rinse
- 1st double-sided PVA brush
- 2nd double-sided PVA brush
- Spin rinse and dry (SRD)
- Number of Brush Stations: 2, double-sided PVA
- Brush size: 70 OD x 31 ID x 170 L
- Rotating speed: 30 – 200 rpm
- Brush position adjustment angle: ± 5°
- Number of chemical inputs: 2
- Type (typical): NH4
OH or DI H2O
- Chemical supply: 4 spray nozzles and through the brush
- Spin Station rotational speed: Up to 2500 rpm
- Spin station rinse: DI H2O
- Blow off/Drying method: N2 blow off
- Process: Single wafer manual load
- Operator interface: Intuitive touch screen
- Cleaning time (typical): 3-5 minutes per wafer

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