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GSI Lumonics UltraDep 2000 PECVD (Plasma-Enhanced Chemical Vapor Deposition)
GSI Lumonics UltraDep 2000 PECVD (Plasma-Enhanced Chemical Vapor Deposition)
GSI Lumonics UltraDep 2000 PECVD (Plasma-Enhanced Chemical Vapor Deposition)
GSI Lumonics UltraDep 2000 PECVD (Plasma-Enhanced Chemical Vapor Deposition)
GSI Lumonics UltraDep 2000 PECVD (Plasma-Enhanced Chemical Vapor Deposition)
GSI Lumonics UltraDep 2000 PECVD (Plasma-Enhanced Chemical Vapor Deposition)
GSI Lumonics UltraDep 2000 PECVD (Plasma-Enhanced Chemical Vapor Deposition)

GSI Lumonics UltraDep 2000 PECVD (Plasma-Enhanced Chemical Vapor Deposition)

Asset #: 57991

Make: GSI Lumonics

Model: UltraDep 2000

Wafer Sizes: 4, 6 inch

GSI Lumonics UltraDep 2000 PECVD (Plasma-Enhanced Chemical Vapor Deposition), 4", 6"
- Load locked tool, single wafer load
- 400C max process temp
- Dual Frequency RF supply for stress control (13.56 MHz and 200 KHz)
- Microprocessor/computer controlled
- Configured with Helium, nitrus oxide, ammonia, silane, TEOS (direct liquid inject), PH3/He dopant mix, B2H6/He dopant mix, hydrogen, oxygen and CF4 gases.
-This gives the capability of Silane Oxides, TEOS Oxides, Stress controlled Silicon Nitrides, Doped oxides (PSG, BPSG, BSG), amorphous silicon and doped amorphous silicon films
- spare parts also included (MFCs, hot plates, etc.)
2000 Vintage

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