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Plasmatherm 790 RIE-PECVD (Reactive Ion Etcher - Plasma-Enhanced Chemical Vapor Deposition)

Asset #: 29272

Make: Plasmatherm

Model: 790

Last Confirm Date: September 21, 2017

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Plasmatherm 790 RIE-PECVD (Reactive Ion Etcher - Plasma-Enhanced Chemical Vapor Deposition)
- The left chamber is for Reactive Ion Etching (RIE)
- The right chamber is for Plasma-Enhanced Chemical Vapor Deposition (PECVD)
- The two chambers share the same vacuum pumps and RF generator, but have different gases.
- The RIE side has O2, H2, CF4, CH4, SF6, CHF3, and Ar.
- The PECVD side has N2, N2O, 2% SiH4 in N2, 2% SiH4 in He, NH3, CF4 + O2, He, and Ar.
- The flow rate for each gas is set by a mass-flow controller (MFC), and the pressure is controlled separately by a butterfly valve between the chamber and the pump.
- The maximum RF power is 500 W.
- The PECVD side has a heater for depositing oxides and nitrides at 250-300oC; there is no temperature control on the RIE side. All system functions are controlled from the computer.

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