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Riber MBE (Molecular Beam Epitaxy)
Riber MBE (Molecular Beam Epitaxy)
Riber MBE (Molecular Beam Epitaxy)

Riber MBE (Molecular Beam Epitaxy)

Asset #: 153924

Make: Riber

Model: -

Last Confirm Date: April 27, 2026

Riber MBE (Molecular Beam Epitaxy)
Vacuum & Chamber Architecture:
- UHV growth chamber with multi-port
geometry
- Cyogenic & turbomolecular pumping
- Load Lock / transfer capability
- Base pressure in base 10' Torr range
Key Subsystems:
- Effusion cell power supplies (multi-channel rack)
- RF plasma source (Advanced Energy Cesar RF
generator)
- Hiden Analytical system (likely RGA or mass spec)
- SPECS control electronics
- Cryogenic temperature controller
- Beam equivalent pressure (BEP) monitoring controls
Deposition Capabilities:
:- Molecular Beam Epitaxy (MBE)
- Elemental and compound semiconductor growth
- Ultra-precise thickness and composition control
- Layer-by-layer epitaxial deposition
Process Control:
- Independent source temperature control (effusion cells)
- RF plasma for reactive species (e.g., nitrogen, oxygen)
- In-situ monitoring via RGA / diagnostics
- Automated recipe control via integrated electronics racks

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