Plasmatherm SLR System VII RIE-PECVD (Reactive Ion Etcher - Plasma-Enhanced Chemical Vapor Deposition), 4", 6", 8"
- Wafer Auto Load / Unload
- Wafer on Plate: 200 mm
- Chuck: 200 mm
- Shower: 280 mm
- Vacuum Gauge: MKS 141A, 10 torr
- Vacuum Control: MKS 286
- Heater Control Watlow 808
- Pump: Leybold D65BCS
- System Control: PC Control
- Transfer System: Auto to Chamber
Gas Box:
- Gas 1: MKS, N2, 200 SCCM
- Gas 2: Brooks 5850E, N2, 1000 SCCM
- Gas 3: MKS, N2, 200 SCCM
- Gas 4: UFC-1200A, N2, 100 SCCM
- Gas 5: Brooks 5850E, N2, 2000 SCCM
PECVD RF System:
- Generator: RF 5
- Match Box: Auto Matching Network, 2000 Watt, 13.56 MHZ
PECVD Pressure Control:
- MKS 252
- MKS Valve Control: 4327.894
- Main Valve VAT F12-67923-02
PECVC Pump
- Leybold D65BCS
RIE Gas Box:
- Gas 1: MKS, N2, 50 SCCM
- Gas 2: UFC-1200, N2, 100 SCCM
- Gas 3: Brooks 5850E, NH3, 100 SCCM
- Gas 4: UFC-1100A, N2, 100 SCCM
- Gas 5: MKS, N2, 100 SCCM
- Gas 6: Brooks 5850E, H2, 100 SCCM
- Gas 7:MKS, N2, 100 SCCM
RIE Chamber:
- Wafer Auto Load / Unload
- Wafer on Plate: 200 mm
- Chuck: 220 mm
- Shower: 280 mm
- Ion Gauge Mask
RIE RF System:
- Generator: RF-10
- Match Box: 7610807010 Network, 1000 Watts, 13.5 MHZ
RIE Pressure Control:
- MKS Control Valve
- Valve Control: MKS
- Main Valve VAT F12-60366-390
RIE Turbo Pump:
- Leybold NT 150/360 Control Unit
- Leybold 360V Turbo Pump
Power:
- 208 V
- 90 A
Process Specif:
- Pressure: 5-10 mTor to 1 Tott
- RF Power: 500 & 1000 w (max)
- Wafer Size: 200 mm, 150 mm, 100 mm
- Uniformity: ≤±5% for all wafer sizes
- Repeatability: ≤±5% (w-t-w)