Jeol JBX 5500 FS E-Beam Direct Write Lithography, 4"
Electron Beam:
- Beam shape Spot (Gaussian) beam
- Accelerating voltage 50 kV, 25 kV
- Beam current 30 pas to 20 nA
Beam Deflection:
- Method: Vector scan (Random access)
Writing field
High-resolution writing mode
- 50kV Up to 100 μm x 100 μm
- 25kV Up to 200 μm x 200 μm
High-speed writing mode
- 50kV Up to 1000 μm x 1000 μm
- 25kV Up to 2000 μm x 2000 μm
Beam-positioning DAC 18 bits
Beam-positioning unit
High-resolution writing mode
- 50kV 0.5 nm
- 25kV 1 nm
High-speed writing mode
- 50kV 5 nm
- 25kV 10 nm
Beam scanning DAC 12 bits
Beam scanning step size
High-resolution writing mode
- 50kV 0.5 nm x N
- 25kV 1 nm x N
High-speed writing mode
- 50kV 5 nm x N
- 25kV 10 nm x N
- N: 1 and even number up to 254*3
Beam scanning speed
- 83.3 ns to 4 ms/scanning step size
- (12 MHz to 250 Hz, respectively)
Field correction function
Deflection correction Amplitude, Rotation
Deflection aberration correction Deflection distortion
Stage Movement
- Method Step and Repeat
- Stage position measurement Laser interferometer
- Stage movement range 104 x 75 mm
- Writing area 75 x 75 mm
- Moving speed Up to 10 mm/s
Material Transfer
- Loader
- Manual loader Single cassette loading mechanism
- Cassette (Substrate Holder)
- Wafer cassette*4
- Wafer size 2 inch, 3 inch and 4 inch
- Wafer loading/unloading Manual
2013 Vintage