Kurt J Lesker ALD 150 LE ALD (Atomic Layer Deposition), up to 6"
- Process chamber construction: 304 L Stainless Steel
- 13 precursor sources available including Ozone
- Typical Process: Al2O3, TiO2, SiO2, Ta2O5, HfO2,ZrO2, HZO, ZnO, AZO, HfN, TiN, GaN, Pt, Ru
- Process Pump: >14CFM chemical series recommended
- Compliance optional: CE, FCC, CSA, NRTL
- Cleanroom Compatibility: Class 100
Precursor Delivery Module Options:
Flow-through Vapor
- For liquid & solid phase precursor with sufficient vapor pressure
Pulse Gas Delivery
- For liquid & solid phase precursor with insufficient/low vapor pressure
- For precise, accurate, high-speed dosing of toxic gases (e.g., WF6, HCl, NH3, H2S, etc.)
Exposure Modes:
- Dynamic
- Static
- Variable Residence Mode (VRM)
Features:
- Unique perpendicular floe design
- Multiple inlets for precursor delivery
- Open-load reactor design
- Independent substrate heater stage
- Unique heater design of source molecules
- Accessible, low maintenance design
- Global service & process control
- eKLipse control software
Options:
- Multiple precursor delivery options
- Ozone
- Multi-technique tool integration via glovebox
- Expansion capability up to 13 precursors
- Chemical series pumping
System Heating: LeskerCladTM
- 500°C Substrate heating
- 250°C Process chamber
- 250°C Delivery lines
- 200°C Valve heating
- 200°C Precursor heating
Deposition Uniformity:
- 1σ Uniformities
- Thermal Al2O3 – 1%
System Control:
- KJLC® eKLipseTM control software (LabView based)
- Independent real time controller
- True precision ALD valve timing providing high resolution
- Windows 10
Substrate Size & Type:
- Single wafer
- 100mm X 100mm solar Si wafers
- Powders and particles
Substrate Transfer:
- Manual Open-loaded
- Glovebox (Single or Multi-too configuration)
- Porous and high aspect ratio (up to 1:2500)
Required Power (Based Options):
- 208-240 VAC
- 50-60Hz
- Single phase
- 3-wire